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keysight technologies 4082F flash memory cell parametric test system data sheet
contents general description .............. 3 speciication .................... 5 switching matrix subsystem ....... 6 dc measurement subsystem ..... 10 capacitance measurement subsystem ..................... 16 pulse force unit ................ 19 software ...................... 20 general speciications ........... 21 recommended conditions for ultra-low current and low voltage measurements ........... 22 introduction the keysight technologies, inc. 4082F lash memory cell parametric test sy stem is designed to perform fast and precise dc measurements, capacitance mea surements, lash cell test and other high frequency applications such as ring oscillat or measure - ment. the system supports up to eight source monitor units (smus). each smu i s self-calibrating, and can be individually conigured to force either cu rrent or voltage, as well as simultaneously measure either current or voltage. the system al so sup- ports a fully guarded switching matrix customizable from 12 to 48 pins. one s pecial additional pin is dedicated as a chuck connection. the 4082F comes standard with a semiconductor pulse generator unit (spgu) mainframe that supports up to ive high-voltage spgus (hv-spgus). an option al keysight 4082F lash memory cell parametric test system high-frequenc y switching matrix with integrated semiconductor pulse generator unit control is a lso available. the hf matrix is organized as two 3 x 24 matrices (six inputs in total), and 1 to 2 furnished cables may be used on each matrix pair to create a 3 x 48 matrix (three inputs in total). the system also has one 1.6 a ground unit.
general description the 4082F can be provided in either a low-current or an ultra-low current con iguration, depending upon the type of matrix card speciied. only 4082F models contai ning the ultra-low current matrix cards can use the high resolution smu (hrsmu). a n optional high-speed capacitance measurement unit (hs-cmu) is available for t he 4082F, which enables the measurement of capacitance and impedance with unprecedent ed speed. external instruments can be integrated into the system via six auxiliar y input ports or forty-eight extended path inputs. the extended path inputs allow the user t o connect external signals directly to the dut pins. measurement functions dc current, dc voltage, capacitance and conductance, impedance and differ ential voltage. key measurement features dc measurements measurement unit hrsmu (high resolution smu) 1 mpsmu (medium power smu) hpsmu (high power smu) measurement functions spot, sweep, pulse bias, and pulse sweep measurement range using two low current smu ports 1 fa 2 to 100 ma, 2 v to 100 v using six standard smu ports 10 fa to 1 a 3 , 2 v to 200 v 3 capacitance, conductance and impedance measurement measurement unit high speed capacitance measurement unit (hs-cmu) keysight e4980a lcr meter hs-cmu measurement functions c/g, c/g-v, c/g-v/f, z/ q and z/ q -f measurement frequencies 1 khz to 2 mhz, 34 points measurement ranges 1 ff to 100 nf, 0.1 ns to 7.5 ms dc bias voltage 10 v keysight e4980a measurement functions c/g and c/g-v measurement frequencies 1 khz, 10 khz, 100 khz and 1 mhz measurement ranges 1 ff to 100 nf, 0.1 ns to 7.5 ms dc bias voltage 40 v two terminal differential voltage measurements measurement unit keysight 3458a measurement range 0.1 v to 100 v (only when using ultra-low current matrix cards), or 1 v to 100 v 1. can be used only with ultra-low current matrix cards 2. using hrsmu. using mpsmu, 10 fa to 100 ma, 2 v to 100 v 3. using optional hpsmu. using mpsmu, 10 fa to 100 ma, 2 v to 100 v 03 | keysight | 4082F flash memory cell parametric test system C data sheet
high frequency pulse force the 4082F cabinet supports an optional high-voltage semiconductor pulse gen erator unit (hv-spgu) mainframe that contains the spgu modules. maximum number of installable hv-spgu modules 5 number of channels per hv-spgu modules 2 pulse level support each hv-spgu channel supports 2-level and 3-level pulses pulse level (at open load) 40 v (at 2-level and 3-level) pulse period (at 50 load) 350 ns to 10 s with 10 ns resolution pulse width (at 50 load) 50 ns to [period - 50 ns] with 2.5 ns 1 or 10 ns 2 resolution pulse delay (at 50 load) 0 s to [period - 75 ns] with 2.5 ns 1 or 10 ns 2 resolution transition time setting range (at 50 load) 20 ns to 400 ms with 2 ns 1 or 8 ns 2 resolution transition time minimum (at 50 load) 20 ns 3 , 30 ns 4 switching matrix number of measurement pins between 12 and 48 pins note: one additional pin is dedicated for the prober chuck connection. instrument ports up to eight smus one ground unit (gndu) eight auxiliary (aux) ports (two ports are used for hs-cmu) 48 extended paths six optional high-frequency (hf) ports and pulse switch input/output po rts 1. transition time setting 10 s 2. transition time setting > 10 s 3. |vamp| 10 v (to 50 ) 4. 10 v < |vamp| 20 v (to 50 ) 04 | keysight | 4082F flash memory cell parametric test system C data sheet
speciication speciication conditions accuracy is speciied under the conditions below. speciication conditions temperature 23c 5c humidity 15% to 70% rh 1 warm up time at least 60 min. self-calibration within one hour after calibration integration time medium or long 2 1. 5% to 60% rh (no condensation) for current measurement accuracy of the hrsm u in 10 pa to 100 na range and isolation resistance of the low-current port 2. for smu current ranges that are less than or equal to 1 na, the integration time mu st be long (16 plc or longer). note: the temperature changes after calibration mus t be less than 3 c. 05 | keysight | 4082F flash memory cell parametric test system C data sheet
switching matrix subsystem switching matrix subsystem maximum dut pins 48 output pins plus one pin for the prober chuck connection (triaxial connec tor). two types of dc switching matrix cards are available: standard low-current and ultra- low current. maximum number of instrument ports smu port in test head eight smus + one gndu C two ports for low-current measurement (non-kelvin) C four ports (kelvin) C two ports (non-kelvin) C one port for gndu (kelvin) auxiliary ports six for external instruments (digital voltmeter, etc .) and two for hs-cmu or e4980a C two triaxial input ports (force/guard/common, aux ports 1 and 2) C four bnc two-pair input ports (force/common and sense/common, aux ports 3 to 6 ) C two bnc input ports (force/common, aux ports 7 and 8, connected to hscmu in default) extended path 48 extended paths the system provides one on/off relay for each path. maximum voltage at each port smu port in test head 200 v aux port 200 v (aux ports 1 and 2) 100 v (aux ports 3 to 8) optional hf ports 100 v (between force and common of each hf port) 100 v (between two of forces of all hf ports) 100 v (between any force of hf ports and any force of extended paths) extended path 100 v (between force and common of each extended path) 100 v (between any force of the optional hf ports and any force of extended path s) zero reference 200 mv maximum current, port to dut pin smu port in test head 1.0 a gndu 1.6 a aux port 1.0 a optional hf ports 0.5 a extended path 0.5 a maximum residual resistance through aux port low current port: force 1.0 kelvin port: force 1.0 , sense 2.5 non-kelvin port: force 1.0 maximum stray capacitance between dut pins 3 pf (supplemental characteristics) isolation resistance low current (with guard): 1 10 15 (supplemental characteristics) 06 | keysight | 4082F flash memory cell parametric test system C data sheet
optional high frequency (hf) ports maximum number of instrument ports six ports for external instruments. hf ports 1 through 3 can access measurement pins 1 through 24, and hf ports 4 throug h 6 can access measurement pins 25 through 48. the user has the option of connecting any of the f ollowing hf port pairs together via a 1 to 2 cable in order to access all (1 through 48) measurement pin s: hf ports 1 and 4, hf ports 2 and 5, and hf ports 3 and 6. maximum residual resistance 2.0 (supplemental characteristics) optional hf port bandwidth (@ C3 db) 60 mhz (50 load impedance: from port to dut pin, 3 24 coniguration, supplemental c haracteristics) optional hf port cross talk between pins 2% (5 k load impedance: from port to dut pin, 20 ns pulse transition time, supple mental characteristics) testhead circuit diagram 07 | keysight | 4082F flash memory cell parametric test system C data sheet
optional pulse switch the optional pulse switch includes seven semiconductor switching relays , for reliable and direct control of pulse shaping by the pulse generator or cpu. the pulse switch is integrated into th e 4082F test head. maximum number of instrument ports please refer to page 7. number of blocks 2 number of switches of each block block 1: three relays (make or break, selectable type) and 1 relay (transfer type to create multilevel pulse) block 2: one relay (make or break, selectable type) and two relays transfer type to create multilevel pulse) control input port one input per each block (psc1 and psc2) control method both the pg and cpu can control all switches. pg or cpu control is independent for every block. in the case of pg control, block 1 can be controlled by the psc1 input, and block 2 can be controlled by either psc1 or psc2 (selectable). mode of relay control make or break, selectable type relay: normally open or normally closed modes are selectable. transfer type relay: normally open and normally closed modes are not selectable. maximum voltage 40 v between force and common of each switch between psi 21 and pso 2 between psi 31 and pso 3 between psi 41 and pso 4 between psi 51 and pso 5 between psi 11 (or psi 12) and pso 1 between psi 11 and psi 12 between psi 61 (or psi 62) and pso 6 between psi 61 and psi 62 between psi 71 (or psi 72) and pso 7 between psi 71 and psi 72) maximum current 0.4 a (from input to output) maximum residual resistance nominal 1.5 (from in to out, supplemental characteristics) off capacitance 50 pf (between in and out: vinCvout = 0 v) 100 pf (between force and common @output of make or break, selectable type relay: vinCvout = 0 v) (supplemental characteristics ) operating time of switching max. 500 s (supplemental characteristics) 08 | keysight | 4082F flash memory cell parametric test system C data sheet
output pso 7pso 6 pso 1 pso 2 pso 3 pso 4 pso 5 input psi 72 psi 71psi 62 psi 61psc 12 psc 11 psc 21 psc 31 psc 41 psi 51psc 2 psc 1 block 2 block 1 pulse switch 9 | keysight | 4082F flash memory cell parametric test system C data sheet
dc measurement subsystem smu (source and monitor unit) voltage source/monitor range, resolution, and accuracy using hrsm u full scale voltage range force resolution measure resolution: high speed measure resolution: precision force accuracy measure accuracy 2 v 100 v 100 v 2 v a: 0.02% a: 0.03% b: 0.025% b: 0.035% c: rmat io c: rmat io 20 v 1 mv 1 mv 20 v a: 0.02% a: 0.03% 40 v 2 mv 2 mv 40 v b: 0.015% b: 0.02% 100 v 5 mv 5 mv 100 v c: rmat io c: rmat io voltage source/monitor range, resolution, and accuracy using mpsm u and hpsmu full scale voltage range force resolution measure resolution: high speed measure resolution: precision force accuracy measure accuracy 2 v 100 v 100 v 2 v a: 0.05% a: 0.04% 20 v 1 mv 1 mv 20 v b: 0.05% b: 0.04% 40 v 2 mv 2 mv 40 v c: rmat io c: rmat io 100 v 5 mv 5 mv 100 v 200 v 1 10 mv 10 mv 200 v a: 0.045% b: 0.04% c: rmat io 1. using hpsmu note: force accuracy is calculated as follows: (a% of output setting val ue + b% of output voltage range + c) (v) measure accuracy is calculated as follows: (a% of measure value + b% of meas urement voltage range + c) (v) io = output current, rmat = residual resistance of switching matrix force po rt note: rmat is different at each port. when using prober chuck connection pin , add 0.1 to rmat. low current port (smu1 and smu2): 1.0 kelvin port: (smu3 to smu6); 3 m non-kelvin port (smu7 and smu8): 1.0 10 | keysight | 4082F flash memory cell parametric test system C data sheet
current source/monitor range, resolution, and accuracy using an mps mu connected to ports smu1 and smu2 full scale current range force resolution measure resolution: high speed measure resolution: precision force accuracy measure accuracy 100 ma 5 a 5 a 100 na a: 0.12% b: 0.1 + 0.0005 vo % c: 0 a: 0.1% b: 0.05 + 0.0005 vo % c: 0 10 ma 500 na 500 na 10 na 1 ma 50 na 50 na 1 na 100 a 5 na 5 na 100 pa 10 a 500 pa 500 pa 10 pa 1 a 50 pa 50 pa 1 pa a: 0.2% b: 0.1 + 0.0005 vo % c: 0.02 pa/v vo a: 0.2% b: 0.05 + 0.0005 vo % c: 0.02 pa/v vo 100 na 5 pa 5 pa 100 fa 10 na 500 fa 500 fa 10 fa a: 1% b: 0.1 + 0.0005 vo % c: 3 pa + 0.02 pa/v vo a: 1% b: 0.1 + 0.0005 vo % c: 3 pa + 0.02 pa/v vo 1 na 50 fa 50 fa 10 fa note: the hpsmu cannot be connected to smu1 and smu2 ports. current measurement accuracy of the smu may be affected by electromagnet ic ield strength over 3 v/m at a frequency of 80 mhz to 1 ghz. 11 | keysight | 4082F flash memory cell parametric test system C data sheet
current source/monitor range, resolution, and accuracy using hrsm u connected to ports smu1 and smu2 full scale current range force resolution measure resolution: high speed measure resolution: precision force accuracy measure accuracy 100 ma 5 a 5 a 100 na a:0.12% b: 0.05 + 0.0001 vo % c: 0 a: 0.1% b: 0.04 + 0.0001 vo % c: 0 10 ma 500 na 500 na 10 na a: 0.06% b: 0.04 + 0.0001 vo % c: 0 a: 0.06% b: 0.03 + 0.0001 vo % c: 0 1 ma 50 na 50 na 1 na a: 0.06% b: 0.05 + 0.0001 vo % c: 0 a: 0.06% b: 0.04 + 0.0001 vo % c: 0 100 a 5 na 5 na 100 pa a: 0.07% b: 0.04 + 0.0001 vo % c: 0 a: 0.06% b: 0.035 + 0.0001 vo % c: 0 10 a 500 pa 500 pa 10 pa a: 0.07% b: 0.05 + 0.0001 vo % c: 0 a: 0.06% b: 0.04 + 0.0001 vo % c: 0 1 a 50 pa 50 pa 1 pa a: 0.12% b: 0.04 + 0.0001 vo % c: 0 a: 0.12% b: 0.035 + 0.0001 vo % c: 0 100 na 5 pa 5 pa 100 fa a: 0.12% b: 0.05 + 0.0001 vo % c: 1 fa/v vo a: 0.12% b: 0.04 + 0.0001 vo % c: 1 fa/v vo 10 na 500 fa 500 fa 10 fa a: 1% b: 0.05 + 0.0001 vo % c: 3 pa + 1 fa/v vo a: 1% b: 0.04 + 0.0001 vo % c: 3 pa + 1 fa/v vo 1 na 50 fa 50 fa 10 fa a: 1% b: 0.07 + 0.0001 vo % c: 3 pa + 1 fa/v vo a: 1% b: 0.04 + 0.0001 vo % c: 3 pa + 1 fa/v vo 100 pa 5 fa 5 fa 2 fa a: 4% b: 0.04 + 0.0001 vo % c: 500 fa + 1 fa/v vo a: 4% b: 0.12 + 0.0001 vo % c: 500 fa + 1 fa/v vo 10 pa 1 fa 2 fa 1 fa a: 4% b: 0.04 + 0.0001 vo % c: 500 fa + 1 fa/v vo a: 4% b: 1.0 + 0.0001 vo % c: 500 fa + 1 fa/v vo 12 | keysight | 4082F flash memory cell parametric test system C data sheet
current source/monitor range, resolution, and accuracy using an mps mu or hpsmu connected to ports smu3 to smu8 full scale current range force resolution measure resolution: high speed measure resolution: precision force accuracy measure accuracy 1 a 1 50 a 50 a 1 a a: 0.5% b: 0.1 + 0.0005 vo% c: 0 a: 0.5% b: 0.05 + 0.0005 vo % c: 0 100 ma 5 a 5 a 100 na a: 0.12% b: 0.1 + 0.0005 vo% c: 0 a: 0.1% b: 0.05 + 0.0005 vo % c: 0 10 ma 500 na 500 na 10 na 1 ma 50 na 50 na 1 na 100 a 5 na 5 na 100 pa 10 a 500 pa 500 pa 10 pa 1 a 50 pa 50 pa 1 pa a: 0.2% b: 0.1 + 0.0005 vo% c: 300 pa + 10 pa/v vo a: 0.2% b: 0.05 + 0.0005 vo % c: 300 pa + 10 pa/v vo 100 na 5 pa 5 pa 100 fa 10 na 2 500 fa 500 fa 10 fa a: 1% b: 0.1 + 0.0005 vo% c: 303 pa + 10 pa/v vo a: 1% b: 0.1 + 0.0005 vo % c: 303 pa + 10 pa/v vo 1 na 2 50 fa 50 fa 10 fa 1. using hpsmu 2. supplemental characteristics when using the smu3 to smu8 ports note: force accuracy is calculated as follows: (a% of output setting val ue + b% of output current range + c) (a) measure accuracy is calculated as follows: (a% of measured value + b% of cur rent measurement range + c) (a) note: the hpsmu can only be connected to the smu3 and smu4 ports. note: current measurement accuracy of the smu may be affected by electrom agnetic ield strength over 3 v/m at a frequency of 80 mhz to 1 ghz. vo = output voltage 13 | keysight | 4082F flash memory cell parametric test system C data sheet
smu other speciications over current range 15% of range (0% for 100 ma range of mpsmu/hrsmu, 0% for 1 a range o f hpsmu, 5% for 10 pa/100 pa range of hrsmu) over voltage range v force: % of range v measure: 10% of range (0% for 100 v range of mpsmu, 0% for 200 v range of hpsmu) current compliance setting range 1 pa to maximum current accuracy of converse polar current limit: 3 2% of range (100 na to 1 a ranges) 10% of range (10 pa to 10 na ranges) maximum capacitive load 1000 pf maximum allowable guard capacitance 250 pf (between signal line and guar d line outside of matrix) maximum slew rate 0.2 v/s gndu this unit is used for ground when making measurements. speciications output voltage 0 v maximum current 1.6 a offset voltage 200 v maximum capacitance load 1 f (supplemental characteristics) digital volt meter (keysight 3458a) voltage measurement range, resolution, and accuracy (at number of power l ine cycles 1) speciications full-scale voltage range resolution accuracy (% of reading + volt) 0.1 v 0.1 v 0.01% + 100 v 1 v 1 v 0.01% + 100 v 10 v 10 v 0.01% + 200 v 100 v 100 v 0.02% + 1 mv 10050 20 -20 -50 -100 -100 -40 -20 20 40 100 current (ma) voltage (v) using mpsmu/hrsmu -200 -100 -40 -20 -14 14 20 40 100 200 1000700 350 125 50 -50 -350 -700 -125-1000 current (ma) voltage (v) using hpsmu 14 | keysight | 4082F flash memory cell parametric test system C data sheet
smu coniguration the default smu coniguration depends upon the matrix card that is chosen (s tandard low current or ultra-low current). please refer to the tables below, which show the smu installation con iguration associated with different combinations of smu resource opt ions. smu installation when using ultra-low current matrix cards no hpsmu one hpsmu two hpsmus port number installed smu installation order port number installed smu installation order port number installed smu installation order 1 mpsmu 2 1 mpsmu 1 1 mpsmu fixed 2 mpsmu fixed 2 mpsmu fixed 2 mpsmu fixed 3 mpsmu fixed 3 hpsmu fixed 3 hpsmu fixed 4 mpsmu fixed 4 mpsmu fixed 4 hpsmu fixed 5 mpsmu 1 5 mpsmu fixed 5 mpsmu fixed 6 mpsmu 3 6 mpsmu 2 6 mpsmu 1 7 mpsmu 4 7 mpsmu 3 7 mpsmu 2 8 mpsmu 5 8 mpsmu 4 8 mpsmu 3 smu installation when using ultra-low current matrix cards one hrsmu, no hpsmus one hrsmu, one hpsmu one hrsmu, two hpsmus port number installed smu installation order port number installed smu installation order port number installed smu installation order 1 mpsmu 2 1 mpsmu 1 1 mpsmu fixed 2 hrsmu fixed 2 hrsmu fixed 2 hrsmu fixed 3 mpsmu fixed 3 hpsmu fixed 3 hpsmu fixed 4 mpsmu fixed 4 mpsmu fixed 4 hpsmu fixed 5 mpsmu 1 5 mpsmu fixed 5 mpsmu fixed 6 mpsmu 3 6 mpsmu 2 6 mpsmu 1 7 mpsmu 4 7 mpsmu 3 7 mpsmu 2 8 mpsmu 5 8 mpsmu 4 8 mpsmu 3 two hrsmus, no hpsmus two hrsmus, one hpsmu two hrsmus, two hpsmus port number installed smu installation order port number installed smu installation order port number installed smu installation order 1 hrsmu fixed 1 hrsmu fixed 1 hrsmu fixed 2 hrsmu fixed 2 hrsmu fixed 2 hrsmu fixed 3 mpsmu fixed 3 hpsmu fixed 3 hpsmu fixed 4 mpsmu fixed 4 mpsmu fixed 4 hpsmu fixed 5 mpsmu 1 5 mpsmu fixed 5 mpsmu fixed 6 mpsmu 2 6 mpsmu 1 6 mpsmu fixed 7 mpsmu 3 7 mpsmu 2 7 mpsmu 1 8 mpsmu 4 8 mpsmu 3 8 mpsmu 2 note: installation order indicates the order in which additional mpsmu s must be installed. 15 | keysight | 4082F flash memory cell parametric test system C data sheet
capacitance measurement subsystem high-speed cmu (capacitance measurement unit) measurement accuracy is speciied between any two measurement pins exce pt the chuck connection pin. speciications measurement range 1 ff to 1.2 nf and 10 ns to 7.5 ms (1 mhz) 1 ff to 10 nf and 1 ns to 6.3 ms (100 khz) 1 ff to 100 nf and 0.1 ns to 6.3 ms (10 khz) 10 ff to 100 nf and 0.1 ns to 63 ms (1 khz) measurement frequency setting range 1 khz to 2 mhz (34 points) test signal level setting range 10 mv, 30 mv, 50 mv, and 100 mv dc bias full-scale voltage range 10 v (setting resolution: 1 mv) force accuracy (0.1% of setting + 10 mv) c/g measurement range, resolution, and accuracy frequency c range c accuracy (% of reading + % of range) g range g accuracy (% of reading + % of range) 2 mhz 1 7 pf 3.2% + [6.3 + (2.3 gm/88 s)]% 88 s 3.2% + [6.5 + (2.5 cm/7 pf)]% 70 pf 2.8% + [2.3 + (1.9 gm/880 s)]% 880 s 2.8% + [2.4 + (2.1 cm/70 pf)]% 1 mhz 10 pf 1 0.8% + [1.1 + (0.6 gm/63 s)]% 63 s 1 0.8% + [1.1 + (0.6 cm/10 pf)]% 100 pf 0.7% + [0.4 + (0.5 gm/630 s)]% 630 s 0.7% + [0.4 + (0.5 cm/100 pf)]% 1 nf 1.5% + [0.3 + (2.1 gm/6.3 ms)]% 6.3 ms 1.5% + [0.3 + (2.2 cm/1 nf)]% 100 khz 10 pf 1 0.4% + [1.1 + (0.3 gm/6.3 s)]% 6.3 s 1 0.4% + [1.1 + (0.4 cm/10 pf)]% 100 pf 0.2% + [0.4 + (0.2 gm/63 s)]% 63 s 0.2% + [0.4 + (0.2 cm/100 pf)]% 1 nf 0.2% + [0.3 + (0.4 gm/630 s)]% 630 s 0.2% + [0.3 + (0.4 cm/1 nf)]% 10 nf 0.5% + [0.3 + (1.0 gm/6.3 ms)]% 6.3 ms 0.5% + [0.3 + (1.0 cm/10 nf)]% 10 khz 100 pf 0.3% + [0.2 + (0.3 gm/6.3 s)]% 6.3 s 0.3% + [0.2 + (0.3 cm/100 pf)]% 1 nf 0.2% + [0.2 + (0.2 gm/63 s)]% 63 s 0.2% + [0.2 + (0.2 cm/1 nf)]% 10 nf 0.2% + [0.2 + (0.2 gm/630 s)]% 630 s 0.2% + [0.2 + (0.2 cm/10 nf)]% 100 nf 0.3% + [0.2 + (1.0 gm/6.3 ms)]% 6.3 ms 0.7% + [0.2 + (0.7 cm/100 nf)]% 1 khz 100 pf 1 0.3% + [0.4 +(0.3 gm/0.63 s)]% 0.63 s 1 0.3% + [0.4 + (0.3 cm/100 pf)]% 1 nf 0.3% + [0.1 + (0.3 gm/6.3 s )]% 6.3 s 0.3% + [0.1 + (0.3 cm/1 nf)]% 10 nf 0.3% + [0.1 + (0.3 gm/63 s)]% 63 s 0.3% + [0.1 + (0.3 cm/10 nf)]% 100 nf 0.3% + [0.1 + (0.3 gm/630 s)]% 630 s 0.3% + [0.1 + (0.3 cm/100 nf)]% 1. supplemental characteristics gm: measured conductance cm: measured capacitance conductance and capacitance measurements are speciied under the fol lowing conditions: measurement frequency: 1 khz, 10 khz, 100 khz, or 1 mhz integration time: medium or long test signal level: 30 mvrms stray capacitance: must be under 5 pf between force and guard calibration and offset cancel: speciications are valid for the data af ter calibration data measurement and offset cancel. capacitance measurement accuracy of hscmu may be affected by conduct ed rf ield strength over 3 vrms at frequency range of 1 mhz to 20 mhz. 16 | keysight | 4082F flash memory cell parametric test system C data sheet
z/ q measurement accuracy (supplemental characteristics) frequency c range c accuracy (% of reading + % of range) q accuracy 1 mhz 10 k 0.8% + 1.8% 0.26 rad 1 k 0.7% + 0.6% 0.02 rad 100 1.5% + 0.5% 0.02 rad 100 khz 100 k 0.4% + 1.8% 0.03 rad 10 k 0.2% + 0.6% 0.01 rad 1 k 0.2% + 0.5% 0.01 rad 100 0.5% + 0.5% 0.01 rad 10 khz 100 k 0.3% + 0.3% 0.01 rad 10 k 0.2% + 0.3% 0.01 rad 1 k 0.2% + 0.3% 0.01 rad 100 k 0.3% + 0.3% 0.01 rad 1 khz 100 k 0.3% + 0.2% 0.01 rad 10 k 0.3% + 0.2% 0.01 rad 1 k 0.3% + 0.2% 0.01 rad keysight e4980a lcr meter measurement accuracy is speciied between any two measurement pins exce pt the chuck connection pin and after calibration data measurement and offset c ancel. speciications measurement range 1 ff to 1.2 nf and 10 ns to 7.5 ms (1 mhz) 1 ff to 10 nf and 1 ns to 6.3 ms (100 khz) 1 ff to 100 nf and 0.1 ns to 6.3 ms (10 khz) 10 ff to 100 nf and 0.1 ns to 0.63 ms (1 khz) measurement frequency 1 khz, 10 khz, 100 khz, and 1 mhz test signal level 30 mv (rms) dc bias full-scale voltage range 40 v force accuracy (0.1% of setting + 10 mv) bias current isolation function off note: above speciications are valid after calibration data measurem ent and offset cancel. 17 | keysight | 4082F flash memory cell parametric test system C data sheet
keysight e4980a lcr meter measurement accuracy is speciied between any two measurement pins exce pt the chuck connection pin and after calibration data measurement and offset cancel. c/g measurement range, resolution, and accuracy frequency c range c accuracy % of reading + % of range g range g accuracy % of reading + % of range 1 mhz 10 pf 1 0.8% + [1.0 + (0.6 gm 2 /63 s)]% 63 s 1 0.8% + [1.0 + (0.6 cm 3 /10 pf)]% 100 pf 0.8% + [0.3 + (0.6 gm/630 s)]% 630 s 0.8% + [0.3 + (0.6 cm/100 pf)]% 1 nf 1.5% + [0.2 + (1.7 gm/6.3 ms)]% 6.3 ms 1.3% + [0.2 + (2.2 cm/1 nf)]% 100 khz 10 pf 1 0.4% + [1.0 + (0.3 gm/6.3 s)]% 6.3 s 1 0.4% + [1.0 + (0.4 cm/10 pf)]% 100 pf 0.3% + [0.3 + (0.3 gm/63 s)]% 63 s 0.3% + [0.3 + (0.3 cm/100 pf)]% 1 nf 0.3% + [0.2 + (0.4 gm/630 s)]% 630 s 0.3% + [0.2 + (0.4 cm/1 nf)]% 10 nf 0.5% + [0.2 + 1.0 (gm/6.3 ms)]% 6.3 ms 0.7% + [0.2 + (0.8 cm/10 nf)]% 10 khz 100 pf 0.3% + [0.2 + (0.3 gm/6.3 s)]% 6.3 s 0.3% + [0.2 + (0.3 cm/100 pf)]% 1 nf 0.3% + [0.1 + (0.3 gm/63 s)]% 63 s 0.3% + [0.1 + (0.3 cm/1 nf)]% 10 nf 0.3% + [0.1 + (0.3 gm/630 s)]% 630 s 0.3% + [0.1 + (0.3 cm/10 nf)]% 100 nf 0.3% + [0.1 + (1.0 gm/6.3 ms)]% 6.3 ms 0.7% + [0.1 + (0.7 cm/100 nf)]% 1 khz 100 pf 1 0.4% + [0.5 +(0.4 gm/0.63 s)]% 0.63 s 1 0.4% + [0.5 + (0.4 cm/100 pf)]% 1 nf 0.3% + [0.1 + (0.3 gm/6.3 s )]% 6.3 s 0.3% + [0.1 + (0.3 cm/1 nf)]% 10 nf 0.3% + [0.1 + (0.3 gm/63 s)]% 63 s 0.3% + [0.1 + (0.3 cm/10 nf)]% 100 nf 0.3% + [0.1 + (0.3 gm/630 s)]% 630 s 0.3% + [0.1 + (0.3 cm/100 nf)]% 1. supplemental characteristics 2. gm = measured conductance 3. cm = measured capacitance note: accuracy is speciied between any dut pins. stray capacitance betw een force and guard must be under 5 pf. frequency accuracy: 0.1%; test signal level: 30 mvrms 5 mvrms. when measurement speed is set to short, add 0.25% to the % of reading and 0.1% to the % o f range. when open/short calibrations at the dut pins are carried out, accuracy is t he same as in the above table. (note that the length of cable from the output pins must be less than 1 meter, and capacitance to guard mu st be under 100 pf. 18 | keysight | 4082F flash memory cell parametric test system C data sheet
pulse force unit speciications supported pulse generators high-voltage semiconductor pulse generator unit (hv-spgu) modules installable hv-spgu modules 5 maximum channels per hv-spgu module 2 pulse force mode each hv-spgu module supports 2-level and 3-level pulses output mode all pulse generator channels (up to 10) can force synchronously hv-spgu output impedance 50 hv-spgu load impedance 0.1 to 1 m pulse level (at open load) 40 v (at 2-level and 3-level) pulse period (at 50 load) 350 ns to 10 s with 10 ns resolution pulse width (at 50 load) 50 ns to [period - 50 ns] with 2.5 ns 1 or 10 ns 2 resolution pulse delay (at 50 load) 0 s to [period - 75 ns] with 2.5 ns 1 or 10 ns 2 resolution transition time (at 50 load) 20 ns to 400 ms with 2 ns 1 or 8 ns 2 resolution transition time minimum (at 50 load) 20 ns 3 , 30 ns 4 pulse amplitude (at open load) 0 to 80 v peak-to-peak pulse level resolution (at open load) 0.4 mv (vout 10 v) 1.6 mv (vout > 10 v) pulse level accuracy (at open load) (2% + 150 mv) pulse shape accuracy (at 50 load) delay: (3% + 1 ns) transition time: ?5% to (+5% + 35 ns) overshoot/ringing: + (5% of amplitude +20 mv) skew between pins: 10 ns pulse shape accuracy (at 5 k load, supplemental characteristics) transition time: ?5% to (+5% + 35 ns) overshoot/ringing: (5% of amplitude +20 mv) skew between pins: 10 ns 1. transition time setting 10 s 2. transition time setting > 10 s 3. |vamp| 10 v (to 50 ) 4. 10 v < |vamp| 20 v (to 50 ) 19 | keysight | 4082F flash memory cell parametric test system C data sheet
software system software standard 4080 software provides the following capabilities system management control of subsystems (tis library) parameter measurement utility (para library) off-line debugging interactive debugging panel (idp: includes test algorithm code gene rating function) automatic diagnostics keysight specs (semiconductor process evaluation core software) keysight specs is a test shell environment for the 4080 series. users have ful l access to the linux environment from within the test shell. the 4080 series requires sp ecs version d.03.10 or later. test development user interaction occurs via a graphical interface with spreadsheet-lik e operation. test plans require simple speciications: wafer, die, test, a nd probe. customization keysight supplies basic development,engineering, and operator te st shell frameworks, which users can tailor or modify to create entirely new frameworks. analysis & output all data is output into a lat ascii ile which users can manipulate to allow for input into database software. in addition, the data management structure supports x-y graphs, histograms, and wafer maps. keysight specs-fa specs-fa, the factory automation version of keysights specs test she ll, runs on all models of the 4080 series tester family. specs-fa fully supports semi aut omation standards e5 (secs ii), e30 (gem), e87 (cms), e39 (oss), e40 (pms), e90 (sts), and e94 (cjm). parallel test capability 4080 series testers support both synchronous and asynchronous paralle l test. keysight specs and specs-fa support a powerful virtual multiple testhead techno logy that enables separate measurement threads to run completely independentl y of one another. this eliminates measurement dead time (time spent waiting for other m easurement threads to complete) and maximizes throughput. 20 | keysight | 4082F flash memory cell parametric test system C data sheet
general speciications operating and storage requirements warm up time at least 60 minutes temperature range operating 5 c to 30 c (no condensation) storage C20 c to 50 c C20 c to 60 c (for an unpacked system) humidity range operating 15% to 70% (no condensation) storage < 80% rh (no condensation) < 90% rh, < 12 hrs (for an unpacked system) power requirement nominal line voltage 1 allowable voltage range required maximum current 200 vac 180 - 220 vac 30 a 208 vac 188 - 228 vac 24 a 220 vac 198 - 242 vac 30 a 240 vac 216 - 252 vac 30 a regulatory and standard compliance emc emc directive (2004/108/ec) en 61326-1 ices/nmb-001 as/nzs cispr 11 safety low voltage directive (2006/95/ec) iec 61010-1:2001/en 61010-1:2001 can/csa-c22.2 no. 61010-1-04, c/us semi s2-0703/s8-1103 certiications ce, csa c/us, c-tick, ices/nmb-001 dimensions system cabinet 294 kg (including 3458a, spgu with 5 x hv-spgu, system controller) test head 166 kg (including 7 mpsmus, 1 hpsmu, 1 hs-cmu, 48 pins, hf matrix, rf matrix, manip ulator extension shelf and pna (e8363c) with enclosure, fan, and duct) supported probers and recommended probe cards 2 prober tel p12xl and precio accretech uf3000 and uf3000ex probe card 3 jem (japan electronic material) mjc (micronics japan co.) sv probe formfactor 1. line frequency must be 48 hz to 63 hz. 2. please contact your local sales representative regarding the late st information on recommended probers and probe cards. 21 | keysight | 4082F flash memory cell parametric test system C data sheet
recommended conditions for ultra-low current and low voltage measurements 1 in addition to the conditions listed in general speciications, keysigh t technologies recommends that the following additional conditions be satisied for me asuring precise low current and low voltage with the 4082F. recommended conditions for ultra-low current and low voltage measur ements probe cards 2 jem and mjc temperature within 1 c after calibration temperature change period 10 minutes humidity 50% warm up time 60 minutes floor vibration 1 mg floor vibration frequency 10 hz air cleanliness class 10,000 line voltage burst noise 1 kv surge noise 1 kv this line voltage environment applies en61326C1 1. the information is this section applies only to systems conigured with ul tra-low current matrix cards and a high-resolution smu. 2. please contact your local sales representative regarding the late st information on recommended probers and probe cards. 22 | keysight | 4082F flash memory cell parametric test system C data sheet
for more information on keysight technologies products, applications or services, please contact your local keysight office. the complete list is available at: www.keysight.com/find/contactus americas canada (877) 894 4414 brazil 55 11 3351 7010 mexico 001 800 254 2440 united states (800) 829 4444 asia paciic australia 1 800 629 485 china 800 810 0189 hong kong 800 938 693 india 1 800 112 929 japan 0120 (421) 345 korea 080 769 0800 malaysia 1 800 888 848 singapore 1 800 375 8100 taiwan 0800 047 866 other ap countries (65) 6375 8100 europe & middle east austria 0800 001122 belgium 0800 58580 finland 0800 523252 france 0805 980333 germany 0800 6270999 ireland 1800 832700 israel 1 809 343051 italy 800 599100 luxembourg +32 800 58580 netherlands 0800 0233200 russia 8800 5009286 spain 800 000154 sweden 0200 882255 switzerland 0800 805353 opt. 1 (de)opt. 2 (fr) opt. 3 (it) united kingdom 0800 0260637 for other unlisted countries: www.keysight.com/find/contactus (bp-09-23-14) mykeysight www.keysight.com/find/mykeysighta personalized view into the information most relevant to you. www.axiestandard.org advancedtca ? extensions for instrumentation and test (axie) is an open standard that extends the advancedtca for general purpose and semiconductor test. keysight is a founding member of the axie consortium. atca ? , advancedtca ? , and the atca logo are registered us trademarks of the pci industrial computer manufacturers group. www.lxistandard.org lan extensions for instruments puts the power of ethernet and the web inside your test systems. keysight is a founding member of the lxi consortium. www.pxisa.org pci extensions for instrumentation (pxi) modular instrumentation delivers a rugged, pc-based high-performance measurement and automation system. three-year warranty www.keysight.com/find/threeyearwarrantykeysights commitment to superior product quality and lower total cost of ownership. the only test and measurement company with three-year warranty standard on all instruments, worldwide. keysight assurance plans www.keysight.com/find/assuranceplansup to five years of protection and no budgetary surprises to ensure your instruments are operating to specification so you can rely on accurate measurements. www.keysight.com/go/quality keysight technologies, inc.dekra certified iso 9001:2008 quality management systemkeysight channel partners www.keysight.com/find/channelpartners get the best of both worlds: keysights measurement expertise and product breadth, combined with channel partner convenience. 23 | keysight | 4082F flash memory cell parametric test system C data sheet this information is subject to change without notice.? keysight technologies, 2007, 2011, 2014 published in usa, august 1, 2014 5989-6548en www.keysight.com

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